cystech electronics corp. spec. no. : c800y3 issued date : 2011.12.22 revised date : page no. : 1/8 2SK3541Y3 cystek product specification esd protected n-channel en hancement mode mosfet 2SK3541Y3 bv dss 30v i d 100ma description ? low voltage drive(2.5v drive) makes th is device ideal for portable equipment. ? high speed switching ? esd protected device ? pb-free lead plating & halogen-free package symbol outline sot-723 absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage bv dss 30 v gate-source voltage v gs 20 v continuous i d 100 ma drain current pulsed i dp 200 *1 ma continuous i dr 100 ma reverse drain current pulsed i drp 200 *1 ma total power dissipation p d 150 *2 mw esd susceptibility 750 *3 v operating junction and storage temperature range tj ; tstg -55~+150 c thermal resistance, junction-to-ambient rth,ja 833 c/w note : *1. pulse width 10 s, duty cycle 1% *2. with each pin mounted on the recommended lands. *3. human body model, 1.5k in series with 100pf 2SK3541Y3 r dson @4v 3.4 (typ) r dson @2.5v 6.9 (typ) g gate d s source d drain g s g s
cystech electronics corp. spec. no. : c800y3 issued date : 2011.12.22 revised date : page no. : 2/8 2SK3541Y3 cystek product specification electrical characteristics (ta=25 c) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0, i d =100 a v gs(th) 0.8 1.3 1.5 v v ds =3v, i d =100 a i gss - - 1 a v gs = 20v, v ds =0 i dss - - 100 na v ds =30v, v gs =0 - 3.4 8 v gs =4v, i d =10ma r ds(on) - 6.9 13 v gs =2.5v, i d =1ma g fs 20 50 - ms v ds =3v, i d =10ma dynamic c iss - 12.5 - c oss - 7.3 - c rss - 3.5 - pf v ds =5v, v gs =0, f=1mhz t d(on) - 15 - t r - 35 - t d(off) - 75 - t f - 75 - ns v dd P 5v, i d =10ma, v gs =5v, r l =500 , r g =10 source-drain diode *v sd - 0.88 1.2 v v gs =0v, i s =100ma *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking 2SK3541Y3 sot-723 (pb-free lead plating & halogen-free package) 8000 pcs / tape & reel kn
cystech electronics corp. spec. no. : c800y3 issued date : 2011.12.22 revised date : page no. : 3/8 2SK3541Y3 cystek product specification typical characteristics typical output characteristics 0 0.05 0.1 0.15 0123 4 gate threshold voltage vs channel temperature 0 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 channel temperature---tch(c) gate threshold voltage---v gs (th)(v) 4v 3.5 v 3v t a =25c drain-source voltage ---v ds (v) drain current --- i d (a) 2.5v 2v vgs=1.5v typical transfer characteristics 0 50 100 150 200 01234 gate-source voltage---v gs (v) drain current ---i d (ma) v ds =3v 25c 125c 75c static drain-source on-state resistance with temperature 2 3 4 5 -50 -25 0 25 50 75 100 125 150 channel temperature---tch(c) static drain-source on-state resistance() i d =50ma i d =100ma v gs =4v static drain-source on-state resistance vs drain current 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 drain current---i d (ma) static drain-source on-state resistance--- r ds (on)() v gs =2.5v v gs =4v t a =25c static drain-source on-state resistance vs drain current 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 drain current---i d (ma) static drain-source on-state resistance--- r ds( on) () v gs =4v v gs =2.5v t a =125c
cystech electronics corp. spec. no. : c800y3 issued date : 2011.12.22 revised date : page no. : 4/8 2SK3541Y3 cystek product specification typical characteristics(cont.) static drain-source on-state resistance vs drain current 1 10 100 1 10 100 1000 drain current---i d (ma) static drain-source on-state resistance- r ds( on) () ta=25c ta=125c ta=75c v gs =2.5v static drain-source on-state resistance vs drain current 1 10 1 10 100 1000 drain current---i d (ma) static drain-source on-state resistance- r ds( on) () ta=25c ta=125c ta=75c v gs =4v static drain-source on-state resistance vs gate-source voltage 0 1 2 3 4 5 6 7 8 9 10 024681 0 static drain-source on-state resistance vs gate-source voltage 0 1 2 3 4 5 6 7 8 9 10 024681 gate-source voltage---v gs (v) static drain-source on-state resistance---r ds( on) () gate-source voltage---v gs (v) static drain-source on-state resistance---r ds( on) () id=50ma ta=75c ta=125c ta=25c 0 ta=25c id=100ma ta=125c ta=75c reverse drain current vs source-drain voltage(i) 0.1 1 10 100 1000 00 . 511 . 5 reverse drain current vs source-drain voltage(ii) 0.1 1 10 100 1000 00 . 511 source-drain voltage-v sd (v) reverse drain current-i dr (ma) source-drain voltage-v sd (v) reverse drain current-i dr (ma) t a =25c t a =75c . 5 v gs =0v v gs =4v t a =125c
cystech electronics corp. spec. no. : c800y3 issued date : 2011.12.22 revised date : page no. : 5/8 2SK3541Y3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 1 10 100 01 02 0 3 0 foreward transfer admittance vs drain current 1 10 100 1000 1 10 100 1000 drain current---i d (ma) forward transfer admittance--- y fs (ms) v ds =3v ta=25c drain-source voltage---v ds (v) capacitance---(pf) ciss ta=75c c oss ta=125c crss power derating curve 0 20 40 60 80 100 120 140 160 0 50 100 150 200 ambient temperature---t a () power dissipation---p d (mw)
cystech electronics corp. spec. no. : c800y3 issued date : 2011.12.22 revised date : page no. : 6/8 2SK3541Y3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c800y3 issued date : 2011.12.22 revised date : page no. : 7/8 2SK3541Y3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 217 c 60-150 seconds 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c800y3 issued date : 2011.12.22 revised date : page no. : 8/8 2SK3541Y3 cystek product specification sot-723 dimension *typical millimeters inches style: pin 1.gate 2.source 3.drain 3-lead sot-723 plastic surface mounted package cystek package code: y3 marking: kn millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.000 0.500 0.000 0.020 d 1.150 1.250 0.045 0.049 a1 0.000 0.050 0.000 0.002 e 1.150 1.250 0.045 0.049 b 0.170 0.270 0.007 0.011 e1 0.750 0.850 0.030 0.033 b1 0.270 0.370 0.011 0.015 e 0.800* 0.031* c 0.000 0.150 0.000 0.006 7 ref 7 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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